The Ion Implanted Neutron Detector of Semiconducting Silicon for National Defence and Security

Abstract

The ion implanted silicon planar diode with a p-n junction for neutron detection has been formed and studied. At the same time, the p-layer of diode is the converter of neutrons. A batch of diodes with the area of 1 and 0.25 cm2 is obtained (formed) by successive 10B ion implantation of monocrystalline Si. Ti and Au ohmic contacts of 100 and 140 nm are deposited on the p-n junction at a temperature of 623 K. The current-voltage characteristics of diodes were studied. At a reverse voltage of 20 V, the current leakage is 11.7-12 μA for 1 cm2 diodes and 8.44-9.55 μA for 0.25 cm2 diodes, respectively.
The first prototype of the detector electronic system has been developed and by using this system, the noise level and noise filtration methods for the switching power supply as well as the noise impact on sensitive analog parts of the detector, and different shielding methods of analog node have been determined. Based on the first prototype test results, a modified, functional prototype of the detector has been developed. The principle scheme has been modified and the printed circuit boards have been developed. The first version of the system management program has been developed.